Semiconductor device and method for manufacturing the same

ABSTRACT

According to one embodiment, a semiconductor device includes a substrate, and a first semiconductor layer including magnesium and Alx1Ga1−x1N. The first semiconductor layer includes first, second, and third regions. The first region is between the substrate and the third region. The second region is between the first and third regions. A first concentration of magnesium in the first region is greater than a third concentration of magnesium in the third region. A second concentration of magnesium in the second region decreases along a first orientation. The first orientation is from the substrate toward the first semiconductor layer. A second change rate of a logarithm of the second concentration with respect to a change of a position along the first orientation is greater than a third change rate of a logarithm of the third concentration with respect to the change of the position along the first orientation.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of and claims benefit under 35 U.S.C. §120 to U.S. application Ser. No. 17/985,538, filed Nov. 11, 2022, whichis a continuation of and claims benefit under 35 U.S.C. § 120 to U.S.application Ser. No. 17/015,378, filed Sep. 9, 2020 (now U.S. Pat. No.11,581,407), which is based upon and claims the benefit of priorityunder 35 U.S.C. § 119 from Japanese Patent Application No. 2020-006880,filed on Jan. 20, 2020, the entire contents of each of which areincorporated herein by reference.

FIELD

Embodiments of the invention generally relate to a semiconductor deviceand a method for manufacturing the semiconductor device.

BACKGROUND

For example, it is desirable to improve the characteristics of asemiconductor device such as a transistor or the like.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view illustrating a semiconductordevice according to a first embodiment;

FIG. 2 is a graph illustrating the semiconductor device according to thefirst embodiment;

FIG. 3 is a graph illustrating a characteristic of the semiconductordevice;

FIGS. 4A to 4D are schematic cross-sectional views illustrating a methodfor manufacturing a semiconductor device;

FIGS. 5A and 5B are graphs illustrating characteristics of semiconductordevices;

FIG. 6 is a graph illustrating a characteristic of the semiconductordevice;

FIG. 7 is a graph illustrating the semiconductor device according to thefirst embodiment;

FIGS. 8A and 8B are graphs illustrating characteristics of semiconductordevices;

FIG. 9 is a schematic cross-sectional view illustrating a semiconductordevice according to the first embodiment;

FIG. 10 is a schematic cross-sectional view illustrating a semiconductordevice according to the first embodiment;

FIG. 11 is a schematic cross-sectional view illustrating a semiconductordevice according to the first embodiment; and

FIGS. 12A and 12B are flowcharts illustrating a method for manufacturinga semiconductor device according to a second embodiment.

DETAILED DESCRIPTION

According to one embodiment, a semiconductor device includes asubstrate, and a first semiconductor layer including magnesium andAl_(x1)Ga_(1−x1)N (0≤x1<1). The first semiconductor layer includes afirst region, a second region, and a third region. The first region isbetween the substrate and the third region. The second region is betweenthe first region and the third region. A first concentration ofmagnesium in the first region is greater than a third concentration ofmagnesium in the third region. A second concentration of magnesium inthe second region decreases along a first orientation. The firstorientation is from the substrate toward the first semiconductor layer.A second change rate of a logarithm of the second concentration withrespect to a change of a position along the first orientation is greaterthan a third change rate of a logarithm of the third concentration withrespect to the change of the position along the first orientation.

According to one embodiment, a semiconductor device includes asubstrate, and a first semiconductor layer including magnesium andAl_(x1)Ga_(1−x1)N (0≤x1<1). The first semiconductor layer includes afirst region, a second region, and a third region. The first region isbetween the substrate and the third region. The second region is betweenthe first region and the third region. A first concentration ofmagnesium in the first region is greater than a third concentration ofmagnesium in the third region. A second concentration of magnesium inthe second region decreases along a first orientation. The firstorientation is from the substrate toward the first semiconductor layer.The third region includes carbon, and the second region does not includecarbon, or a concentration of carbon in the third region is greater thana concentration of carbon in the second region.

According to one embodiment, a method for manufacturing a semiconductordevice is disclosed. The method can include preparing a substrate, andforming a first semiconductor layer on the substrate by using a gas. Thegas includes ammonia, a raw material including gallium, and a rawmaterial including magnesium. The first semiconductor layer includesmagnesium and Al_(x1)Ga_(1−x1)N (0≤x1<1). The forming of the firstsemiconductor layer includes forming a first region by using a first gaswith a first partial pressure of ammonia. The first gas includesammonia, a raw material including gallium, and a raw material includingmagnesium. The forming of the first semiconductor layer includes, afterthe forming of the first region, forming a second region by using asecond gas with a second partial pressure of ammonia. The second gasincludes ammonia and a raw material including gallium. The secondpartial pressure is greater than the first partial pressure. The formingof the first semiconductor layer includes, after the forming of thesecond region, forming a third region by using a third gas with a thirdpartial pressure of ammonia. The third gas includes ammonia and a rawmaterial including gallium. The third partial pressure is less than thesecond partial pressure.

Various embodiments are described below with reference to theaccompanying drawings.

The drawings are schematic and conceptual; and the relationships betweenthe thickness and width of portions, the proportions of sizes amongportions, etc., are not necessarily the same as the actual values. Thedimensions and proportions may be illustrated differently amongdrawings, even for identical portions.

In the specification and drawings, components similar to those describedpreviously in an antecedent drawing are marked with like referencenumerals, and a detailed description is omitted as appropriate.

First Embodiment

FIG. 1 is a schematic cross-sectional view illustrating a semiconductordevice according to a first embodiment.

As shown in FIG. 1 , the semiconductor device 110 according to theembodiment includes a substrate 10 s and a first semiconductor layer 10.In the example, the semiconductor device 110 further includes a secondsemiconductor layer 20.

The semiconductor device 110 may further include a third semiconductorlayer 30.

The first semiconductor layer 10 includes magnesium andAl_(x1)Ga_(1−x1)N (0≤x1<1). The first semiconductor layer 10 includes,for example, GaN including Mg. The first semiconductor layer 10 is, forexample, a p-type GaN layer.

The second semiconductor layer 20 includes Al_(x2)Ga_(1−x2)N (0<x2≤1 andx1<x2). The second semiconductor layer 20 includes, for example, AlGaN.The composition ratio of Al in the second semiconductor layer 20 is, forexample, not less than 0.1 and not more than 0.4. The firstsemiconductor layer 10 is between the substrate 10 s and the secondsemiconductor layer 20.

The third semiconductor layer 30 includes a nitride semiconductorincluding Al. The third semiconductor layer 30 includes, for example,AlN. The third semiconductor layer 30 may include multiple AlGaN filmshaving different composition ratios of Al. The third semiconductor layer30 is between the substrate 10 s and the first semiconductor layer 10.The third semiconductor layer 30 is, for example, a buffer layer.

For example, the third semiconductor layer 30 is formed on the substrate10 s. The first semiconductor layer 10 is formed on the thirdsemiconductor layer 30. The second semiconductor layer 20 is formed onthe first semiconductor layer 10.

In the embodiment, the first semiconductor layer 10 includes a firstregion 11, a second region 12, and a third region 13. The first region11 is between the substrate 10 s and the third region 13. The secondregion 12 is between the first region 11 and the third region 13.

The concentration (a first concentration) of magnesium in the firstregion 11 is greater than the concentration (a third concentration) ofmagnesium in the third region 13. The concentration (a secondconcentration) of magnesium in the second region 12 decreases along afirst orientation, which is from the substrate 10 s toward the firstsemiconductor layer 10.

The first orientation is along a Z-axis direction. A directionperpendicular to the Z-axis direction is taken as an X-axis direction. Adirection perpendicular to the Z-axis direction and the X-axis directionis taken as a Y-axis direction.

For example, the upper surface (the surface facing the firstsemiconductor layer 10) of the substrate 10 s is substantially parallelto the X-Y plane. The first semiconductor layer 10 spreads along the X-Yplane. The second semiconductor layer 20 spreads along the X-Y plane.The third semiconductor layer 30 spreads along the X-Y plane.

The first orientation (the +Z orientation) corresponds to the stackingdirection of the substrate 10 s and the first semiconductor layer 10.

As described below, for example, a two-dimensional electron gas isgenerated at the vicinity of the interface between the firstsemiconductor layer 10 and the second semiconductor layer 20. Thetwo-dimensional electron gas is used as a current path. For example, asource electrode, a drain electrode, and a gate electrode are providedon the second semiconductor layer 20. A current that flows between thesource electrode and the drain electrode can be controlled bycontrolling the potential of the gate electrode. For example, thesemiconductor device 110 can function as a transistor. For example, byusing the first semiconductor layer 10 including Mg in such an example,the threshold voltage can be increased. For example, a normally-offcharacteristic is more easily obtained.

In one example, a thickness t20 (the thickness along the firstorientation) of the second semiconductor layer 20 is not less than 5 nmand not more than 40 nm.

In one example, a thickness t1 (the thickness along the firstorientation) of the first region 11 is not less than 100 nm and not morethan 1000 nm. In one example, a thickness t2 (the thickness along thefirst orientation) of the second region 12 is not less than 5 nm and notmore than 200 nm. In one example, a thickness t3 (the thickness alongthe first orientation) of the third region 13 is not less than 10 nm andnot more than 1000 nm. The first thickness t1 is the thickness of thefirst region 11 along the Z-axis direction. The second thickness t2 isthe thickness of the second region 12 along the Z-axis direction. Thethird thickness t3 is the thickness of the third region 13 along theZ-axis direction.

In the embodiment as described above, the first semiconductor layer 10(e.g., the GaN layer) includes three regions (the first to third regions11 to 13) having different concentrations of Mg. An example of theconcentrations of Mg of the semiconductor device 110 will now bedescribed.

FIG. 2 is a graph illustrating the semiconductor device according to thefirst embodiment.

The horizontal axis of FIG. 2 is a position pZ along the Z-axisdirection. In the graph, the orientation from the right toward the leftcorresponds to the first orientation (the +Z orientation). The verticalaxis of FIG. 2 is a magnesium concentration logarithm CMg. FIG. 2 showsa logarithm CMg1 of the first concentration of magnesium in the firstregion 11, a logarithm CMg2 of the second concentration of magnesium inthe second region 12, and a logarithm CMg3 of the third concentration ofmagnesium in the third region 13. FIG. 2 also shows a logarithm CMg20 ofthe magnesium concentration in the second semiconductor layer 20.

As shown in FIG. 2 , the first concentration (the logarithm CMg1) ofmagnesium in the first region 11 is greater than the third concentration(the logarithm CMg3) of magnesium in the third region 13. The secondconcentration (the logarithm CMg2) of magnesium in the second region 12decreases along the first orientation (the orientation from thesubstrate 10 s toward the first semiconductor layer 10).

As shown in FIG. 2 , a second change rate of the logarithm CMg2 of thesecond concentration with respect to the change of the position pZ alongthe first orientation is greater than a third change rate of thelogarithm CMg3 of the third concentration with respect to the change ofthe position pZ along the first orientation. The second change rate ofthe logarithm CMg2 of the second concentration with respect to thechange of the position pZ along the first orientation is greater than afirst change rate of the logarithm CMg1 of the first concentration withrespect to the change of the position pZ along the first orientation.The absolute value of the second change rate of the logarithm CMg2 ofthe second concentration with respect to the change of the position pZalong the first orientation is, for example, greater than the absolutevalue of the third change rate of the logarithm CMg3 of the thirdconcentration with respect to the change of the position pZ along thefirst orientation. The absolute value of the second change rate of thelogarithm CMg2 of the second concentration with respect to the change ofthe position pZ along the first orientation is, for example, greaterthan the absolute value of the first change rate of the logarithm CMg1of the first concentration with respect to the change of the position pZalong the first orientation.

The second change rate corresponds to the gradient of the logarithm CMg2of the second concentration in the second region 12. The third changerate corresponds to the gradient of the logarithm CMg3 of the thirdconcentration in the third region 13. The first change rate correspondsto the gradient of the logarithm CMg1 of the first concentration in thefirst region 11.

Thus, in the embodiment, a second region 12 in which the concentrationof magnesium abruptly changes is provided, and the third region 13 inwhich the change rate of the magnesium concentration is small (or doesnot change) is provided.

As described above, the two-dimensional electron gas is formed in thefirst semiconductor layer 10 at the vicinity of the second semiconductorlayer 20. The two-dimensional electron gas is provided in the thirdregion 13 of the first semiconductor layer 10. If the magnesiumconcentration in the third region 13 is high, the movement of electronsis impeded by the Mg. The impedance by the Mg is suppressed by settingthe magnesium concentration in the third region 13 to be low. Highelectron mobility is easily obtained thereby.

On the other hand, the threshold voltage can be effectively increased bysetting the magnesium concentration in the first region 11 to be high.The second region 12 is a region in which the concentration of magnesiumdecreases from the first region 11 toward the third region 13.

For example, a first reference example may be considered in which theconcentration of magnesium changes smoothly (e.g., linearly) from theposition of the boundary between the first region 11 and the secondregion 12 (a point p1 in FIG. 2 ) toward the boundary between the thirdregion 13 and the second semiconductor layer 20 (a point p2 in FIG. 2 ).In such a case, the threshold voltage greatly changes as the thicknessbetween the point p1 and the point p2 changes. The threshold voltage isdependent on the concentration of magnesium. The threshold voltagedecreases as the concentration of magnesium decreases.

In the embodiment, the magnesium concentration in the second region 12changes in a step configuration with a high change rate. The change ofthe magnesium concentration is small in the third region 13. Thereby,for example, the threshold voltage is relatively resistant to changeeven when the thickness of the third region 13 changes.

For example, there are cases where the thickness of the third region 13fluctuates due to fluctuation of the manufacturing processes, etc.According to the embodiment, the tolerance of the fluctuation of thethickness can be enlarged. In the embodiment, a practical semiconductordevice in which the threshold voltage is stabilized is applicable. Asemiconductor device can be provided in which the characteristics can beimproved.

As described above, a high threshold voltage is obtained by providingthe first region 11 having the high concentration of magnesium.According to the embodiment, a high threshold voltage is stably obtainedeven when the manufacturing conditions fluctuate.

In the embodiment, the second change rate (the second change rate of thelogarithm CMg2 of the second concentration of Mg in the second region 12with respect to the change of the position pZ along the firstorientation) is, for example, not less than 0.01 and not more than 0.2.The absolute value of the second change rate is, for example, not lessthan 0.01 and not more than 0.2. In the example, the units of the secondchange rate are (log₁₀(1/cm³))/nm. Thereby, for example, thecontrollability of the threshold voltage is improved.

As shown in FIG. 2 , the change of the magnesium concentration can beillustrated using a horizontal axis corresponding to the position pZ(nm) along the Z-axis direction and a vertical axis corresponding to themagnesium concentration logarithm CMg (units: /cm³). In such a case, forexample, a second change rate ΔCMg2 is represented using the magnesiumconcentration at the point p1 of FIG. 2 and the magnesium concentrationat a point p3 of FIG. 2 . The point p1 of FIG. 2 corresponds to theposition of the boundary between the first region 11 and the secondregion 12. The point p3 of FIG. 2 corresponds to the position of theboundary between the second region 12 and the third region 13. Thelogarithm of the magnesium concentration at the point p1 is taken asCMg(p1) (units: /cm³). The logarithm of the magnesium concentration atthe point p3 is taken as CMg(p3) (units: /cm³). The position along theZ-axis direction of the point p1 is taken as pZ(p1) (units: nm). Theposition along the Z-axis direction of the point p3 is taken as pZ(p3)(units: nm).

The second change rate ΔCMg2 is represented by

ΔCMg2=(log₁₀(CMg(p1))−log₁₀(CMg(p3)))/(pZ(p1)−pZ(p3)).

The units of the second change rate ΔCMg2 are (log₁₀(1/cm³))/nm.

In the embodiment, the third change rate (the third change rate of thelogarithm CMg3 of the third concentration of Mg in the third region 13with respect to the change of the position pZ along the firstorientation) is, for example, not less than 0.0001 and not more than0.002. The absolute value of the third change rate is, for example, notless than 0.0001 and not more than 0.002. In the example, the units ofthe third change rate are (log₁₀(1/cm³))/nm. Thereby, for example, thechange of the threshold voltage when the thickness of the third region13 changes can be reduced.

For example, a third change rate ΔCMg3 is represented using themagnesium concentration at the point p2 of FIG. 2 and the magnesiumconcentration at the point p3 of FIG. 2 . The point p2 of FIG. 2corresponds to the position of the boundary between the third region 13and the second semiconductor layer 20. The logarithm of the magnesiumconcentration at the point p2 is taken as CMg(p2) (units: /cm³). Theposition along the Z-axis direction of the point p2 is taken as pZ(p2)(units: nm).

The third change rate ΔCMg3 is represented by

ΔCMg3=(log₁₀(CMg(p3))−log₁₀(CMg(p2)))/(pZ(p3)−pZ(p2)).

The units of the third change rate ΔCMg3 are (log₁₀(1/cm³))/nm.

In the embodiment, the magnesium concentration in the second region 12decreases in a step configuration. As described below, for example, sucha profile is easily obtained using ingenuity of practical manufacturingconditions, etc. Examples of experiment results relating tomanufacturing conditions of a GaN layer including magnesium (Mg) willnow be described.

FIG. 3 is a graph illustrating a characteristic of the semiconductordevice.

FIG. 3 shows the relationship for a GaN layer including Mg between amanufacturing condition and the concentration of Mg included in the GaNlayer. The horizontal axis of FIG. 3 is a partial pressure PN (kPa) ofammonia when the GaN including Mg is grown. The vertical axis of FIG. 3is a concentration CMg0 of Mg. The concentration CMg0 is shownlogarithmically.

For example, GaN including Mg is grown using a gas including ammonia, araw material including Ga (gallium), and a raw material including Mg.For example, the growth is performed by metal-organic chemical vapordeposition (MOCVD (Metal Organic Chemical Vapor Deposition)). The rawmaterial that includes Ga is, for example, TMG (trimethylgallium). Theraw material that includes Mg is, for example, Cp₂Mg (biscyclopentadienyl magnesium). In the example of FIG. 3 , the ratio(Cp₂Mg/TMG) of the supply amount of Cp₂Mg to the supply amount of TMG is3.7×10⁻⁶. The partial pressure of Cp₂Mg is constant in the example ofFIG. 3 .

As shown in FIG. 3 , the concentration CMg0 of Mg in the Ga decreases asthe partial pressure PN of ammonia (the partial pressure of the ammoniagas) Increases. This means that the efficiency of incorporating Mg intothe GaN decreases as the partial pressure PN of ammonia increases. Forexample, the concentration of Mg introduced to the GaN changes even whenthe partial pressure of Cp₂Mg is constant.

Generally, it is considered that Mg remains inside the depositionapparatus (e.g., on the apparatus wall surfaces, etc.) after a GaN layerincluding Mg is grown. Therefore, there are cases where the remaining Mgis unintentionally incorporated into the GaN of a GaN layer not toinclude Mg that is grown after growing the GaN layer including Mg. Insuch a case, the Mg is unintentionally introduced to the GaN layer ifthe growth of the GaN layer that is not to include Mg is performed byemploying conditions at which Mg is easily incorporated. Conversely, theintroduction of Mg to the GaN layer can be suppressed if the growth ofthe GaN layer that is not to include Mg is performed by employingconditions at which Mg is not easily incorporated.

For example, by employing conditions that consider the efficiency ofincorporating Mg, a GaN layer that does not include Mg (or has anappropriately low Mg concentration) is more easily obtained.

On the other hand, when the efficiency of incorporating Mg is notconsidered, Mg is unintentionally introduced to the GaN layer.Therefore, it is difficult to appropriately reduce the Mg concentration.In such a case, for example, the thickness of the GaN layer that isgrown is increased until the Mg that remains inside the depositionapparatus is consumed and the concentration of Mg becomes low. Or, it isdifficult to reduce the concentration of Mg.

For example, by employing conditions that consider the efficiency ofincorporating Mg, a GaN layer that does not include Mg (or has anappropriately low Mg concentration) is more easily obtained.

FIGS. 4A to 4D are schematic cross-sectional views illustrating a methodfor manufacturing a semiconductor device.

The substrate 10 s is prepared as shown in FIG. 4A. For example, thethird semiconductor layer 30 may be formed on the substrate 10 s. Thefirst region 11 is formed on the substrate 10 s (in the example, on thethird semiconductor layer 30). The first region 11 is formed using thefirst gas that includes ammonia, a raw material including gallium, and araw material including magnesium. In the formation of the first region11, the partial pressure PN of ammonia is a first partial pressure. Thefirst partial pressure is relatively low. The first partial pressure is,for example, not less than 5 kPa and not more than 15 kPa.

As shown in FIG. 4B, the second region 12 is formed after forming thefirst region 11. The second region 12 is formed using a second gas thatincludes ammonia and a raw material including gallium. A raw materialthat includes magnesium is not supplied in the formation of the thirdregion 13. In the formation of the second region 12, the partialpressure PN of ammonia is a second partial pressure. The second partialpressure is greater than the first partial pressure. The second partialpressure is not less than 35 kPa and not more than 65 kPa. The secondpartial pressure may be not less than 36 kPa and not more than 60 kPa.Because the second partial pressure is high, even when Mg remains in theprocessing apparatus, Mg is not easily incorporated into the secondregion 12.

As shown in FIG. 4C, the third region 13 is formed after forming thesecond region 12. The third region 13 is formed using a third gas thatincludes ammonia and a raw material including gallium. A raw materialthat includes magnesium is not supplied in the formation of the thirdregion 13. In the formation of the third region 13, the partial pressurePN of ammonia is a third partial pressure. For example, the thirdpartial pressure may be less than the second partial pressure. The thirdpartial pressure is, for example, not less than 20 kPa and not more than35 kPa. For example, the Mg that remains in the processing apparatus islow when forming the third region 13. Therefore, even when the thirdpartial pressure is less than the second partial pressure, Mg is noteasily incorporated into the third region 13. For example, the thirdpartial pressure may be equal to the second partial pressure. Forexample, because the Mg that remains in the processing apparatus is low,the third region 13 that has less incorporation of Mg can be formed.

For example, by using such manufacturing conditions, a profile is easilyobtained in which the Mg concentration in the second region 12 decreasesin a step configuration.

As shown in FIG. 4D, after forming the third region 13, the secondsemiconductor layer 20 is formed using a gas that includes a rawmaterial including aluminum, a raw material including gallium, andammonia.

FIGS. 5A and 5B are graphs illustrating characteristics of semiconductordevices.

FIG. 5A illustrates analysis results of SIMS (Secondary Ion MassSpectrometry) of the Mg concentration in a first sample SP1 manufacturedwith the conditions described above. When manufacturing the first sampleSP1, the second partial pressure is greater than the first partialpressure. The third partial pressure is less than the second partialpressure and greater than the first partial pressure.

FIG. 5B illustrates SIMS analysis results of the Mg concentration in asecond sample SP2. When manufacturing the second sample SP2, the secondpartial pressure is equal to the first partial pressure. The thirdpartial pressure is equal to the first partial pressure. Accordingly, inthe second sample SP2, the second region 12 and the third region 13cannot be discriminated. For convenience, the regions that correspondrespectively to the second and third regions 12 and 13 in the firstsample SP1 are respectively considered to be the second and thirdregions 12 and 13 in the second sample SP2.

In FIGS. 5A and 5B, the horizontal axis is the position pZ in the Z-axisdirection. The vertical axis is the concentration CMg0 of Mg.

In the first sample SP1 as shown in FIG. 5A, the concentration CMg0 ofMg in the first region 11 is high. The concentration CMg0 of Mgdecreases in a step configuration in the second region 12. Theconcentration CMg0 of Mg in the third region 13 is low.

In the second sample SP2 as shown in FIG. 5B, the concentration CMg0 ofMg is high in the first region 11, the second region 12, and the thirdregion 13. The concentration CMg0 of Mg substantially does not decrease.It is considered that this is caused by the Mg that remains in theprocessing apparatus being incorporated into the GaN because the secondpartial pressure is equal to the first partial pressure. For example, itis considered that the third partial pressure being equal to the firstpartial pressure causes the Mg remaining in the processing apparatus tobe incorporated into the GaN. In the second sample SP2, the electronmobility of a transistor that uses the configuration of the secondsample SP2 is low because the concentration CMg0 of Mg is high in theportion corresponding to the third region 13. For example, theon-resistance of the transistor is high.

An example of a characteristic of a transistor formed using such a firstsample SP1 will now be described.

FIG. 6 is a graph illustrating a characteristic of the semiconductordevice.

FIG. 6 illustrates the characteristic of a transistor formed using thecondition of the first sample SP1 (in which the second partial pressureis greater than the first partial pressure). This figure showsmeasurement results of multiple samples having different thicknesses t3of the third region 13. In this figure, the horizontal axis is thethickness t3 (nm) of the third region 13. The vertical axis is athreshold voltage Vth (V).

For the condition of the first sample SP1 as shown in FIG. 6 , thethreshold voltage Vth becomes substantially constant when the thicknesst3 of the third region 13 becomes thick. For example, a stable thresholdis obtained even when the thickness t3 of the third region 13fluctuates.

In the embodiment, for example, it is favorable for the condition of thefirst sample SP1 described above to be employed. Thereby, theconcentration CMg0 of Mg in the second region 12 changes in a stepconfiguration having a high change rate. Thereby, a high thresholdvoltage Vth is stably obtained even when the thickness t3 of the thirdregion 13 fluctuates. For example, a normally-off operation is stablyobtained. For example, the tolerance of the fluctuation of the thicknesscan be enlarged. A practical semiconductor device that has a highthreshold voltage Vth is applicable. Thereby, a semiconductor device canbe provided in which the characteristics can be improved.

In the embodiment as shown in FIG. 2 , the concentration (the thirdconcentration) of Mg in the third region 13 may decrease along the firstorientation (the +Z orientation). Thereby, the scattering of theelectrons caused by the Mg is reduced, and high electron mobility iseasily obtained. For example, high electron mobility is easily obtainedin the two-dimensional electron gas formed at the Interface between thesecond semiconductor layer 20 and the third region 13.

As shown in FIG. 2 , for example, the first change rate of the logarithmof the concentration (the first concentration) of Mg in the first region11 with respect to the change of the position pZ along the firstorientation (the +Z orientation) is less than the change rate (the thirdchange rate) of the logarithm of the concentration (the thirdconcentration) of Mg in the third region 13 with respect to the changeof the position pZ along the first orientation (the +Z orientation). Theabsolute value of the first change rate of the logarithm of theconcentration (the first concentration) of Mg in the first region 11with respect to the change of the position pZ along the firstorientation (the +Z orientation) is, for example, less than the absolutevalue of the change rate (the third change rate) of the logarithm of theconcentration (the third concentration) of Mg in the third region 13with respect to the change of the position pZ along the firstorientation (the +Z orientation).

In the embodiment, for example, the average value in the third region 13of the third concentration (the concentration CMg0 of Mg in the thirdregion 13) is not more than 1/10 of the average value in the firstregion of the first concentration (the concentration CMg0 of Mg in thefirst region 11). By setting the average value of the thirdconcentration to be low, for example, high electron mobility is easilyobtained.

The average value in the third region 13 of the third concentration is,for example, 5×10¹⁶/cm³ or less. The average value in the third region13 of the third concentration may be, for example, 2×10¹⁶/cm³ or less.The average value in the third region 13 of the third concentration maybe, for example, 1×10¹⁶/cm³ or less.

In the embodiment, for example, the average value in the first region 11of the first concentration (the concentration CMg0 of Mg in the firstregion 11) is, for example, 5×10¹⁶/cm³ or more. The average value in thefirst region 11 of the first concentration may be, for example,1×10¹⁹/cm³ or less. The average value in the first region 11 of thefirst concentration may be, for example, 5×10¹⁸/cm³ or less.

In the embodiment, the first semiconductor layer 10 may include carbon.An example of a profile of the carbon concentration in the firstsemiconductor layer 10 will now be described.

FIG. 7 is a graph illustrating the semiconductor device according to thefirst embodiment.

The horizontal axis of FIG. 7 is the position pZ along the Z-axisdirection. In the graph, the orientation from the right toward the leftcorresponds to the first orientation (the +Z orientation). The verticalaxis of FIG. 7 is a carbon concentration logarithm CC. FIG. 7 shows alogarithm CC1 of the carbon concentration in the first region 11, alogarithm CC2 of the carbon concentration in the second region 12, and alogarithm CC3 of the carbon concentration in the third region 13.

As shown in FIG. 7 , the concentration (the logarithm CC3) of carbon inthe third region 13 is greater than the concentration (the logarithmCC2) of carbon in the second region 12. Or, the third region 13 mayinclude carbon, and the second region 12 may not include carbon.

For example, the incorporation of Mg into the third region 13 can besuppressed by incorporating carbon into the third region 13. Forexample, in a p-type region, carbon acts as an n-type impurity. Forexample, carbon suppresses the function of Mg as a p-type impurity. Forexample, the Mg can be compensated by the carbon existing in the thirdregion 13.

For example, by setting the carbon concentration in the second region 12to be low, the concentration of Mg can change in a step configurationwith a high change rate. For example, the controllability of thethreshold voltage is Improved, and a stable threshold is easilyobtained.

For example, the carbon concentration in the third region 13 is not lessthan 3×10¹⁶/cm³ and not more than 5×10′⁷/cm³. Thereby, for example, theMg concentration in the third region 13 is more easily controlled.

For example, the carbon concentration in the second region 12 is notless than 2×10¹⁵/cm³ and not more than 2×10¹⁶/cm³. Thereby, for example,the concentration of Mg can change in a step configuration with a highchange rate. For example, the controllability of the threshold voltageis improved, and a stable threshold is easily obtained.

In one example as shown in FIG. 7 , the carbon concentration in thefirst region 11 is less than the carbon concentration in the thirdregion 13. For example, by setting the carbon concentration in the firstregion 11 to be low, the function of the p-type conductivity of the Mgin the first region 11 is effectively obtained. The first region 11substantially may not include carbon.

For example, the carbon concentration in the first region 11 may be lessthan the carbon concentration in the second region 12. For example, thecarbon concentration in the first region 11 is not less than 1×10¹⁴/cm³and not more than 2×10¹⁶/cm³. The carbon concentration in the firstregion 11 may be not less than 1×10¹⁴/cm³ and not more than 9×10¹⁵/cm³.

FIGS. 8A and 8B are graphs illustrating characteristics of semiconductordevices.

FIG. 8A illustrates SIMS analysis results of the carbon concentration inthe first sample SP1. As described above, the second partial pressure isgreater than the first partial pressure when manufacturing the firstsample SP1. For the first sample SP1, the third partial pressure isgreater than the first partial pressure. FIG. 8B corresponds to thesecond sample SP2 described above. When manufacturing the second sampleSP2, the second partial pressure is equal to the first partial pressure,and the third partial pressure is equal to the first partial pressure.

In the first sample SP1 as shown in FIG. 8A, the carbon concentration inthe second region 12 is greater than the carbon concentration in thefirst region 11. In the first sample SP1, the carbon concentration inthe third region 13 is greater than the carbon concentration in thesecond region 12. In the first sample SP1, the carbon concentration inthe second region 12 is greater than the carbon concentration in thefirst region 11 and less than the carbon concentration in the thirdregion 13.

For the first sample SP1 described above, the third partial pressure isless than the second partial pressure. It is considered that carbon iseasily incorporated when the third partial pressure is less than thesecond partial pressure. It is considered that carbon is more easilyincorporated into the third region 13 by setting the third partialpressure to be less than the second partial pressure.

Thus, the semiconductor device according to the embodiment includes thesubstrate 10 s, and the first semiconductor layer 10 that includesmagnesium and Al_(x1)Ga_(1−x1)N (0≤x1<1). The first semiconductor layer10 includes the first region 11, the second region 12, and the thirdregion 13. The first region 11 is between the substrate 10 s and thethird region 13. The second region 12 is between the first region 11 andthe third region 13. The concentration CMg0 of magnesium in the firstregion 11 is greater than the concentration CMg0 of magnesium in thethird region 13. The concentration CMg0 of magnesium in the secondregion 12 decreases along the first orientation (the +Z orientation),which is from the substrate toward the first semiconductor layer 10. Thethird region 13 includes carbon, and the second region 12 does notinclude carbon. Or, the carbon concentration in the third region 13 isgreater than the carbon concentration in the second region 12.

FIG. 9 is a schematic cross-sectional view illustrating a semiconductordevice according to the first embodiment.

As shown in FIG. 9 , the semiconductor device 120 according to theembodiment includes a first electrode 51, a second electrode 52, and athird electrode 53 in addition to the substrate 10 s, the firstsemiconductor layer 10, and the second semiconductor layer 20. In theexample, the semiconductor device 120 includes the third semiconductorlayer 30. The configurations of the substrate 10 s, the firstsemiconductor layer 10, the second semiconductor layer 20, and the thirdsemiconductor layer 30 of the semiconductor device 120 may be the sameas those of the semiconductor device 110. Examples of the electrodeswill now be described.

As shown in FIG. 9 , the direction from a portion 10 a of the firstsemiconductor layer 10 toward the first electrode 51 is along the firstorientation (the +Z orientation). The direction from another portion 10b of the first semiconductor layer 10 toward the second electrode 52 isalong the first orientation (the +Z orientation). A second directionfrom the first electrode 51 toward the second electrode 52 crosses thefirst orientation. The second direction is, for example, the X-axisdirection. The position in the second direction of the third electrode53 is between the position in the second direction of the firstelectrode 51 and the position in the second direction of the secondelectrode 52.

For example, in the example, a portion of the second semiconductor layer20 is between the third electrode 53 and a portion 10 c of the firstsemiconductor layer 10. An insulating film 80 is between the secondsemiconductor layer 20 and the third electrode 53.

For example, the first electrode 51 functions as a source electrode. Forexample, the second electrode 52 functions as a drain electrode. Forexample, the third electrode 53 functions as a gate electrode. Thesemiconductor device 120 is, for example, a HEMT (High Electron MobilityTransistor).

FIGS. 10 and 11 are schematic cross-sectional views illustratingsemiconductor devices according to the first embodiment. As shown inFIGS. 10 and 11 , the semiconductor devices 121 and 122 according to theembodiment also include the substrate 10 s, the first semiconductorlayer 10, the second semiconductor layer 20, the first electrode 51, thesecond electrode 52, the third electrode 53, and the Insulating film 80.

In the semiconductor devices 121 and 122, the direction from at least aportion of the third electrode 53 toward the second semiconductor layer20 is along the X-axis direction. The semiconductor devices 121 and 122include, for example, recessed gate electrodes. In the semiconductordevice 121, the direction from at least a portion of the third electrode53 toward a portion of the second semiconductor layer 20 is along theX-axis direction. In the semiconductor device 122, the direction from atleast a portion of the third electrode 53 toward a portion of the firstsemiconductor layer 10 is along the X-axis direction.

In the semiconductor devices 120, 121, and 122, the first semiconductorlayer 10 includes the first region 11, the second region 12, and thethird region 13 described above. Thereby, for example, a stablethreshold voltage Vth is obtained.

Second Embodiment

A second embodiment relates to a method for manufacturing asemiconductor device.

FIGS. 12A and 12B are flowcharts illustrating the method formanufacturing the semiconductor device according to the secondembodiment.

In the manufacturing method as shown in FIG. 12A, the substrate 10 s isprepared (step S100). The third semiconductor layer 30 may be providedon the substrate 10 s.

The first semiconductor layer 10 is formed on the substrate 10 s (stepS110). The first semiconductor layer 10 includes magnesium andAl_(x1)Ga_(1−x1)N (0≤x1<1). The formation of the first semiconductorlayer 10 is performed using a gas including ammonia, a raw materialincluding gallium, and a raw material including magnesium.

As shown in FIG. 12A, the second semiconductor layer 20 also may beformed (step S120).

FIG. 12B illustrates the formation of the first semiconductor layer 10.As shown in FIG. 12B, the formation of the first semiconductor layer 10(step S110) includes the formation of the first region 11 (step S111),the formation of the second region 12 (step S112), and the formation ofthe third region 13 (step S113).

In the formation of the first region 11, the first region 11 is formedusing the first gas that includes ammonia with the first partialpressure, a raw material including gallium, and a raw material includingmagnesium.

The formation of the second region 12 is performed after the formationof the first region 11. In the formation of the second region 12, thesecond region 12 is formed using the second gas that includes ammoniawith the second partial pressure and a raw material including gallium.The second partial pressure is greater than the first partial pressure.

The formation of the third region 13 is performed after the formation ofthe second region 12. In the formation of the third region 13, the thirdregion 13 is formed using the third gas that includes ammonia with thethird partial pressure and a raw material including gallium. In oneexample, the third partial pressure is less than the second partialpressure. In one other example, the third partial pressure is equal tothe second partial pressure.

In the manufacturing method according to the embodiment, the secondpartial pressure is greater than the first partial pressure. Thereby,the Mg concentration in the second region 12 can be reduced (in a stepconfiguration) with a high change rate. On the other hand, the thirdpartial pressure is not more than the second partial pressure. Thechange of the Mg concentration in the third region 13 can be reducedthereby. Thereby, for example, the fluctuation of the threshold voltageVth can be suppressed. In the embodiment, a method for manufacturing asemiconductor device can be provided in which the characteristics can beimproved.

In the embodiment, the first partial pressure is, for example, not lessthan 5 kPa and not more than 15 kPa. The second partial pressure is, forexample, not less than 36 kPa and not more than 60 kPa. The thirdpartial pressure is, for example, not less than 20 kPa and not more than35 kPa.

In the embodiment, the substrate 10 s includes, for example, silicon.The substrate 10 s may include, for example, sapphire, SiC, or GaN. Thethird semiconductor layer 30 includes, for example, AlN. The thirdsemiconductor layer 30 may include, for example, a stacked body in whichmultiple AlGaN layers are stacked. The third semiconductor layer 30 mayhave, for example, a superlattice structure in which a GaN layer and anAlN layer are periodically stacked.

According to the embodiments, a semiconductor device and a method formanufacturing the semiconductor device can be provided in which thecharacteristics can be improved.

In the embodiment, “nitride semiconductor” includes all compositions ofsemiconductors of the chemical formula B_(x)In_(y)Al_(z)Ga_(1−x−y−z)N(0≤x≤1, 0≤y≤1, 0≤z≤1, and x+y+z≤1) for which the composition ratios x,y, and z are changed within the ranges respectively. “Nitridesemiconductor” further includes group V elements other than N (nitrogen)in the chemical formula recited above, various elements added to controlvarious properties such as the conductivity type and the like, andvarious elements included unintentionally.

Hereinabove, exemplary embodiments of the invention are described withreference to specific examples. However, the embodiments of theinvention are not limited to these specific examples. For example, oneskilled in the art may similarly practice the Invention by appropriatelyselecting specific configurations of components included insemiconductor devices such as substrates, semiconductor layers,electrodes, insulating films, etc., from known art. Such practice isincluded in the scope of the invention to the extent that similareffects thereto are obtained.

Further, any two or more components of the specific examples may becombined within the extent of technical feasibility and are included inthe scope of the invention to the extent that the purport of theInvention is included.

Moreover, all semiconductor devices, and methods for manufacturingsemiconductor devices practicable by an appropriate design modificationby one skilled in the art based on the semiconductor devices, and themethods for manufacturing semiconductor devices described above asembodiments of the invention also are within the scope of the inventionto the extent that the purport of the invention is included.

Various other variations and modifications can be conceived by thoseskilled in the art within the spirit of the invention, and it isunderstood that such variations and modifications are also encompassedwithin the scope of the invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

What is claimed is:
 1. A semiconductor device, comprising: a substrate;and a first semiconductor layer including magnesium andAl_(x1)Ga_(1−x1)N (0≤x1<1), the first semiconductor layer including afirst region, a second region, and a third region, the first regionbeing between the substrate and the third region, the second regionbeing between the first region and the third region, a firstconcentration of magnesium in the first region being greater than athird concentration of magnesium in the third region, a secondconcentration of magnesium in the second region decreasing along a firstorientation, the first orientation being from the substrate toward thefirst semiconductor layer, the first region not including carbon, or aconcentration of carbon in the first region being lower than aconcentration of carbon in the second region.
 2. The device according toclaim 1, wherein the third concentration decreases along the firstorientation.
 3. The device according to claim 1, wherein a second changerate of a logarithm of the second concentration with respect to a changeof a position along the first orientation is greater than a third changerate of a logarithm of the third concentration with respect to thechange of the position along the first orientation.
 4. The deviceaccording to claim 3, wherein a first change rate of a logarithm of thefirst concentration with respect to the change of the position along thefirst orientation is less than the third change rate.
 5. The deviceaccording to claim 1, wherein the third region includes carbon and thesecond region does not include carbon, or a concentration of carbon inthe third region is greater than a concentration of carbon in the secondregion.
 6. The device according to claim 5, wherein the concentration ofcarbon in the third region is not less than 3×10¹⁶/cm³ and not more than5×10¹⁷/cm³, and the concentration of carbon in the second region is notless than 2×10¹⁵/cm₃ and not more than 2×10¹⁶/cm³.
 7. The deviceaccording to claim 1, wherein the concentration of carbon in the firstregion is not less than 1×10¹⁴/cm³ and not more than 2×10¹⁶/cm³.
 8. Thedevice according to claim 3, wherein the second change rate is not lessthan 0.01 and not more than 0.2 in units of (log₁₀(1/cm³))/nm.
 9. Thedevice according to claim 3, wherein the third change rate is not lessthan 0.0001 and not more than 0.002 in units of (log₁₀(1/cm³))/nm. 10.The device according to claim 1, wherein a thickness along the firstorientation of the third region is not less than 10 nm and not more than1000 nm.
 11. The device according to claim 1, wherein a thickness alongthe first orientation of the second region is not less than 5 nm and notmore than 200 nm.
 12. The device according to claim 1, wherein anaverage value in the third region of the third concentration is not morethan 1/10 of an average value in the first region of the firstconcentration.
 13. The device according to claim 1, wherein an averagevalue in the third region of the third concentration is 5×10¹⁶/cm³ orless.
 14. The device according to claim 1, wherein an average value inthe first region of the first concentration is not less than 5×10¹⁶/cm³and not more than 5×10¹⁸/cm³.
 15. The device according to claim 1,further comprising: a third semiconductor layer including a nitridesemiconductor including Al, the third semiconductor layer being betweenthe substrate and the first semiconductor layer.
 16. The deviceaccording to claim 1, further comprising: a second semiconductor layerincluding Al_(x2)Ga_(1−x2)N (0<x2≤1 and x1<x2), the first semiconductorlayer being between the substrate and the second semiconductor layer.17. The device according to claim 1, further comprising: a firstelectrode; a second electrode; and a third electrode, a direction from aportion of the first semiconductor layer toward the first electrodebeing along the first orientation, a direction from an other portion ofthe first semiconductor layer toward the second electrode being alongthe first orientation, a second direction from the first electrodetoward the second electrode crossing the first orientation, and aposition in the second direction of the third electrode being between aposition in the second direction of the first electrode and a positionin the second direction of the second electrode.